2sb1215/2sd1815 no. 2539-1/10 applications ? relay drivers, high-speed inverters, converters, and other general high-current switching applications features ? low collector-to-emitter saturation voltage ? excllent linearity of h fe ? small-sized package permitting 2sb1215/2sd1815-applied sets to be made small and slim ? high f t ? fast switching time speci cations ( ): 2sb1215 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)3 a collector current (pulse) i cp (--)6 a continued on next page. package dimensions unit : mm (typ.) package dimensions unit : mm (typ.) 7518-003 7003-003 ordering number : en2539c 50212 tkim/n2503tn (kt)/92098ha (kt)/40196ts (koto) 8-9913/8229mo/4097ta, ts sanyo semiconductors data sheet 2sb1215/2sd1815 pnp/npn epitaxial planar silicon transistor high-current switching applications http://semicon.sanyo.com/en/network product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s c-64, to-251, sot-553, dpak ? jeita, jedec : s c-63, to-252, sot-428, dpak ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a 2sb1215s-e 2sb1215s-h 2sb1215t-e 2sb1215t-h 2sd1815s-e 2sd1815s-h 2sd1815t-e 2sd1815t-h 2sb1215s-tl-e 2sb1215s-tl-h 2sb1215t-tl-e 2sb1215t-tl-h 2sd1815s-tl-e 2SD1815S-TL-H 2sd1815t-tl-e 2sd1815t-tl-h 2,4 1 3 2sd1815 2,4 1 3 2sb1215 b1215 d1815 lot no. rank lot no. rank
2sb1215/2sd1815 no. 2539-2/10 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 1w tc=25 c20w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min. typ. max. collector cutoff current i cbo v cb =(--)100v, i e =0a (--)1 ed test circuit. 100 ns storage time t stg (800)900 ns fall time t f 50 ns * : the 2sb1215/2sd1815 are classi ed by 100ma h fe as follows : rank q r s t h fe 70 to 140 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sb1215s-e tp 500pcs./bag pb free 2sb1215s-h tp 500pcs./bag pb free and halogen free 2sb1215t-e tp 500pcs./bag pb free 2sb1215t-h tp 500pcs./bag pb free and halogen free 2sd1815s-e tp 500pcs./bag pb free 2sd1815s-h tp 500pcs./bag pb free and halogen free 2sd1815t-e tp 500pcs./bag pb free 2sd1815t-h tp 500pcs./bag pb free and halogen free 2sb1215s-tl-e tp-fa 700pcs./reel pb free 2sb1215s-tl-h tp-fa 700pcs./reel pb free and halogen free 2sb1215t-tl-e tp-fa 700pcs./reel pb free 2sb1215t-tl-h tp-fa 700pcs./reel pb free and halogen free 2sd1815s-tl-e tp-fa 700pcs./reel pb free 2SD1815S-TL-H tp-fa 700pcs./reel pb free and halogen free 2sd1815t-tl-e tp-fa 700pcs./reel pb free 2sd1815t-tl-h tp-fa 700pcs./reel pb free and halogen free i c =10i b1 = --10i b2 =1.5a for pnp, the polarity is reversed. v r r b v cc =50v v be = --5v + + 50 7 input output 100 m f 470 m f pw=20 m s i b1 d.c. b 1% i b2
2sb1215/2sd1815 no. 2539-3/10 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe 2.0 1.6 1.2 0.8 0.4 12 4 35 0 0 itr09234 2sd1815 --2.0 --1.6 --1.2 --0.8 --0.4 0 0 --1 --2 --4 -- 3 -- 5 itr09233 2sb1215 i b =0 --2ma --6ma --12ma --18ma --20ma --16ma --10ma --8ma --4ma i b =0 2ma 4ma 6ma 8ma 10ma 14ma 16ma 18ma 20ma 12ma --14ma 2sd1815 v ce =5v 100 --0.01 1000 5 3 2 5 10 3 2 5 5 --0.1 23 5 23 5 --1.0 23 5 --10 2sb1215 v ce = --5v itr09239 ta=75 c 25 c --25 c 100 0.01 1000 5 10 3 2 7 5 3 2 7 7 5 5 0.1 10 23 5 23 5 23 5 1.0 itr09240 ta=75 c 25 c --25 c 1.0 0.8 0.6 0.4 0.2 10 20 40 30 50 0 0 itr09236 2sd1815 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --10 --20 --40 --30 --50 itr09235 2sb1215 i b =0 --0.5ma --1.5ma --4.0ma --3.5ma --3.0ma --2.5ma --2.0ma --1.0ma i b =0 0.5ma 1.0ma 2.0ma 2.5ma 1.5ma 3.0ma 3.5ma 4.0ma 4.5ma 5.0ma --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 itr09237 2sb1215 v ce = --5v --25 c 25 c ta=75 c 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 itr09238 2sd1815 v ce =5v - -25 c 25 c ta=75 c
2sb1215/2sd1815 no. 2539-4/10 v ce (sat) -- i c collector current, i c -- a v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a 2sb1215 / 2sd1815 f=1mhz 0.1 5 100 10 3 2 3 2 7 5 2 1.0 23 23 57 357 2sb1215 / 2sd1815 v ce =10v itr09241 2sb1215 2sd1815 10 1.0 2 100 5 3 2 7 7 5 57 10 22 357 23 57 100 itr09242 2sb1215 2sd1815 itr09248 0 1.2 1.0 0.8 0.6 0.4 0.2 100 140 120 160 20 060 40 80 2sb1215 / 2sd1815 2sd1815 i c / i b =10 52352 5 323 5 --1.0 --0.1 --0.01 --10 3 2 7 5 3 7 5 --1.0 2 itr09245 2sb1215 i c / i b =10 2sd1815 i c / i b =10 itr09243 2sb1215 i c / i b =10 ta= --25 c 25 c 75 c ta=75 c 25 c --25 c 0.1 1.0 0.01 52352 10 35 235 5 3 2 5 3 2 1000 7 5 3 2 7 100 10 itr09244 ta=75 c 25 c - -25 c 5235 5 0.01 23 5 0.1 23 1.0 10 3 2 7 5 3 7 5 1.0 2 itr09246 ta= --25 c 25 c 75 c itr09247 2sb1215 / 2sd1815 i c i cp 1ms 10ms 100ms dc operation (tc=25 c) dc operation (ta=25 c) 10 1.0 5 3 2 5 3 2 5 3 2 5 0.1 0.01 25 3 1.0 25 3 10 25 3 100 2 --0.1 --1.0 --0.01 5235235235 --10 5 3 2 5 3 2 --1000 5 3 2 --100 --10 a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c p c -- ta tc=25 c single pulse for pnp, the minus sign is omitted. ideal heat dissipation for pnp, the minus sign is omitted. for pnp, the minus sign is omitted.
2sb1215/2sd1815 no. 2539-5/10 collector dissipation, p c -- w case temperature, tc -- c p c -- tc itr09249 0 24 20 16 12 8 4 100 140 120 160 20 060 40 80 2sb1215 / 2sd1815
2sb1215/2sd1815 no. 2539-6/10 taping speci t cation 2sb1215s-tl-e, 2sb1215s-tl-h, 2sb1215t-tl-e2sb1215t-tl-h, 2sd1815s-tl-e, 2SD1815S-TL-H, 2sd1815t-tl-e, 2sd1815t-tl-h
2sb1215/2sd1815 no. 2539-7/10 outline drawing land pattern example 2sb1215s-tl-e, 2sb1215s-tl-h, 2sb1215t-tl-e2sb1215t-tl-h, 2sd1815s-tl-e, 2SD1815S-TL-H, 2sd1815t-tl-e, 2sd1815t-tl-h mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sb1215/2sd1815 no. 2539-8/10 bag packing speci t cation 2sb1215s-e, 2sb1215s-h, 2sb1215t-e2sb1215t-h, 2sd1815s-e, 2sd1815s-h, 2sd1815t-e, 2sd1815t-h
2sb1215/2sd1815 no. 2539-9/10 outline drawing 2sb1215s-e, 2sb1215s-h, 2sb1215t-e2sb1215t-h, 2sd1815s-e, 2sd1815s-h, 2sd1815t-e, 2sd1815t-h mass (g) unit 0.315 * for reference mm
2sb1215/2sd1815 no. 2539-10/10 ps this catalog provides information as of may, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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